Review on interface engineering of low leakage current and on-resistance for high-efficiency Ga2O3-based power devices br

Beta-Gallium oxide (beta-Ga2O3) has emerged as a very feasible semiconductor material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse material systems. The high breakdown electric field, high working temperature, and excellent Baliga`s figure-of-merit (BFOM) of beta-Ga2O3 represent an inspiring outlook of power electronic devices. beta-Ga2O3-based materials and devices have been increasingly popular in recent years for power electronics, owing to their ability to generate high-quality bulk substrates at a low cost. In this review article, we describe the recent investigations on the interface engineering of the beta-Ga2O3-based power devices. Meanwhile, different methods for enlightening the performances including breakdown voltage and onresistance have been summarized. Improved ohmic connections by reducing contact resistance through interfacial engineering and interlayers such as conducting oxides of AZO, ITO, and related materials, as well as the development of selective ion implantation doping. Some solutions to problematic challenges, such as p-type doping difficulty and low thermal conductivity, are also provided and addressed. Transferring devices to another substrate or thinning down the substrate and using heat sinks as well as top-side heat extraction could help to mitigate the low thermal conductivity. The ion-cutting process for heterogeneous integration of a beta-Ga2O3 thin film with a highly thermally conductive substrate is an innovative technology for overcoming beta-Ga2O3 weak thermal conductivity in nature and realizing beta-Ga2O3 full potential in power electronics. Finally, the viewpoint of beta-Ga2O3-based devices for power electronic applications has been analyzed.

Automated summary

Beta-Gallium oxide (beta-Ga2O3) has emerged as a promising semiconductor material for power electronic devices due to its ultra-wide bandgap and diverse material systems. This review article discusses recent investigations on the interface engineering of beta-Ga2O3-based power devices, summarizing different methods for improving performances and addressing challenges such as p-type doping difficulty and low thermal conductivity. The study also highlights the potential of ion-cutting process for achieving full potential of beta-Ga2O3 in power electronics.