Highly Efficient Deposition of Centimeter-Scale MoS2 Monolayer Film on Dragontrail Glass with Large Single-Crystalline Domains

Highly efficient growth of a centimeter-scale MoS2 monolayer film by oxide scale sublimation chemical vapor deposition (OSSCVD) in a time as short as 60 s is reported. Benefiting from the superior catalytic ability of Dragontrail glass (DT-glass) substrate and the controlled large vapor supersaturation of the molybdenum source, the ultrafast deposition of MoS2 is realized with maintaining large-sized single-crystalline domains over 20 mu m at maximum in the film. It is comparable to those reported for MoS2 grown in tens of minutes and even hours. Similar to the face-to-face precursor feed route, the gas-controlled OSSCVD with a showerhead configuration facilitates a homogeneous and controllable source supply. It enables high-quality monolayer MoS2 film deposition on 2 x 2 cm(2) DT-glass with centimeter-scale uniformity confirmed by microscopic, spectroscopic, and electrical characterizations. Back-gate MoS2 field-effect transistors fabricated on polycrystalline continuous film exhibit the maximum field-effect mobility of 5.1 cm(2) V(-1)s(-1) and a peak I-on/I-off ratio of 5 x 10(8). They reach 40 cm(2) V-1 s(-1) and 1.2 x 10(9), respectively, on single-crystalline domains. These results are even greater than those for MoS2 grown using 1-2 orders of magnitude longer deposition time and higher temperatures. This study highlights the opportunities for low-cost high-throughput production of large-area high-quality monolayer MoS2.

Automated summary

A highly efficient method for growing large-area MoS2 monolayer films in a short time is reported. The technique of oxide scale sublimation chemical vapor deposition (OSSCVD) allows for ultrafast deposition of MoS2 on a Dragontrail glass substrate, maintaining large-sized single-crystalline domains over 20 mu m. The gas-controlled OSSCVD with a showerhead configuration enables homogeneous and controllable source supply, resulting in high-quality monolayer MoS2 films with centimeter-scale uniformity. Field-effect transistors fabricated on the films exhibit excellent performance, surpassing results obtained using longer deposition time and higher temperatures. This study highlights the potential for low-cost high-throughput production of large-area high-quality monolayer MoS2.