4.8 Article

Interface-assisted cation exchange enables high-performance perovskiteLEDs with tunable near-infrared emissions

期刊

JOULE
卷 6, 期 10, 页码 2423-2436

出版社

CELL PRESS
DOI: 10.1016/j.joule.2022.08.003

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资金

  1. ERC Starting Grant [717026]
  2. Swedish Research Council Vetenskapsra [2020-03564]
  3. Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]
  4. Swedish Research Council [2020-00589]
  5. European Research Council (ERC) [717026] Funding Source: European Research Council (ERC)
  6. Forte [2020-00589] Funding Source: Forte
  7. Swedish Research Council [2020-03564, 2020-00589] Funding Source: Swedish Research Council
  8. Vinnova [2020-00589] Funding Source: Vinnova

向作者/读者索取更多资源

Highly emissive CsxFA1_xPbI3 perovskite films, which can be used in tunable near-infrared LEDs, were fabricated using an alkaline-interface-assisted cation-exchange method. The Cs-FA ion-exchange barrier was effectively eliminated, enabling the formation of phase-pure CsxFA1_xPbI3 films with tunable emissions. The resulting NIR perovskite LEDs demonstrated high external quantum efficiencies, high radiances, and high power conversion efficiencies, representing the best performance in a similar region.
Achieving high-quality cesium-formamidinium lead iodide (CsxFA1_xPbI3) perovskites with tunable band gaps is highly desired for optoelectronic applications including solar cells and light -emit-ting diodes (LEDs). Herein, by utilizing an alkaline-interface-assisted cation-exchange method, we fabricate highly emissive CsxFA1_x PbI3 perovskite films with fine-tunable Cs-FA alloying ratio for emis-sion-tunable near-infrared (NIR) LEDs. We reveal that the deproto-nation of FA+ cations and the formation of hydrogen-bonded gels consisting of CsI and FA facilitated by the zinc oxide underneath effectively removes the Cs-FA ion-exchange barrier, promoting the formation of phase-pure CsxFA1_xPbI3 films with tunable emis-sions filling the gap between that of pure Cs-and FA-based perov-skites. The obtained NIR perovskite LEDs (PeLEDs) peaking from 715 to 780 nm simultaneously demonstrate high peak external quantum efficiencies of over 15%, maximum radiances exceeding 300 W sr_1 m_2, and high power conversion efficiencies above 10% at 100 mA cm_2, representing the best-performing LEDs based on solution-processed NIR emitters in a similar region.

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