Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr0.7Ca0.3MnO3/Al devices by employing a two-resistor model

Area-dependent memristive devices such as Al/Pr0.7Ca0.3MnO3 (PCMO) stacks are highly interesting candidates for synapses in neuromorphic circuits due to their gradual switching properties, their reduced variability and the possibility to tune the resistance with the device area. However, due to the complexity of the different processes taking place, the electronic and ionic transport in theses devices is so far only poorly understood and physical compact models to simulate their behavior are missing so far. We developed a mathematical description of the dynamics of theses devices based on a simple two-resistor model that reproduces the device behavior very well. Based on x-ray photoelectron spectroscopy and impedance spectroscopy we assign the two resistors to the AlOx layer and a depletion zone at the Pr0.7Ca0.3MnO3 layer, respectively. We assign the parameters used within the mathematical model to physical parameters and make use of them in order to explain the dynamics of the switching processes during the SET and RESET process in different voltage regimes. For both poly- and single crystalline PCMO thin film devices, oxygen migration between the AlOx and the PCMO depletion zone is responsible for the resistance change. However, the dynamics differ significantly due to the increased mobility of oxygen vacancies with increasing defect density in the case of the polycrystalline samples. Moreover, we observe volatile subloops in our current-voltage curves, which vanish within millisecond time scale. Based on our two-resistor model and the band diagram derived from spectroscopic measurements, we assign these subloops to the injection of electrons into traps within the AlOx barrier.

Automated summary

This study provides a mathematical model for the dynamics of area-dependent memristive devices based on Al/Pr0.7Ca0.3MnO3 (PCMO) stacks. The two resistors in the model are assigned to the AlOx layer and the depletion zone at the Pr0.7Ca0.3MnO3 layer, respectively. The resistance change is attributed to oxygen migration between the AlOx and the PCMO depletion zone, with significant differences observed between polycrystalline and single crystalline samples. In addition, volatile subloops in the current-voltage curves are explained as the injection of electrons into traps within the AlOx barrier.