期刊
ELECTRONICS
卷 11, 期 20, 页码 -出版社
MDPI
DOI: 10.3390/electronics11203365
关键词
one-transistor dynamic random-access memory; metal-oxide-semiconductor field-effect transistor; polycrystalline silicon
资金
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [NRF-2020R1A2C1005087]
- BK21 FOUR - Ministry of Education, Korea [4199990113966]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2021R1A6A3A13039927]
- National R&D Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2022M3I7A1078936, 2021M3F3A2A03017764]
- Kyungpook National University
- Samsung Electronics Co. Ltd.
- IC Design Education Center (IDEC), Korea
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a polycrystalline silicon (Poly-Si) metal-oxide-semiconductor field-effect transistor (MOSFET) with a storage layer separated using a separation oxide was designed and analyzed. The proposed 1T-DRAM achieved good performance, even in the presence of a grain boundary.
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a polycrystalline silicon (Poly-Si) metal-oxide-semiconductor field-effect transistor (MOSFET) with a storage layer separated using a separation oxide was designed and analyzed using technology computer-aided design (TCAD). The channel and storage layers were separated using a separation oxide to improve the inferior retention time of the conventional 1T-DRAM, and we adopted the underlap structure to reduce Shockley-Read-Hall recombination. In addition, poly-Si, which has several advantages, including low manufacturing cost and availability of high-density three-dimensional (3D) memory arrays, is used to easily fabricate silicon-on-insulator (SOI)-like structures. Accordingly, we extracted memory performance by analyzing the effect of grain boundary (GB). The proposed 1T-DRAM achieved a sensing margin of 14.10 mu A/mu m and a retention time of 251 ms at T = 358 K, even in the existence of a GB.
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