期刊
NPJ COMPUTATIONAL MATERIALS
卷 8, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41524-022-00854-z
关键词
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资金
- European H2020 GrapheneCore3 Project [LP2017-9/2017]
- Elvonal Grant [KKP 138144]
- NKFIH OTKA grant [K132869, FK124723, K131938]
- TKP20121 NKPA grant
- Janos Bolyai Research Scholarship the Bolyai+ Scholarship of the Hungarian Academy of Sciences
- Ministry of Innovation and Technology for the Quantum Information National Laboratory
By combining ab initio calculations and direct measurements, we have accurately identified the topological insulator-metal transition induced by strain in ZrTe5. Our model can describe the response to different strain patterns without fitting parameters, reproducing the mechanical deformation-dependent closing of the band gap. By calculating the topological phase diagram, we can design device architectures that exploit the topological switching characteristics of the system.
Topological materials host robust properties, unaffected by microscopic perturbations, owing to the global topological properties of the bulk electron system. Materials in which the topological invariant can be changed by easily tuning external parameters are especially sought after. Zirconium pentatelluride (ZrTe5) is one of a few experimentally available materials that reside close to the boundary of a topological phase transition, allowing the switching of its invariant by mechanical strain. Here, we unambiguously identify a topological insulator-metal transition as a function of strain, by a combination of ab initio calculations and direct measurements of the local charge density. Our model quantitatively describes the response to complex strain patterns found in bubbles of few layer ZrTe5 without fitting parameters, reproducing the mechanical deformation-dependent closing of the band gap observed using scanning tunneling microscopy. We calculate the topological phase diagram of ZrTe5 and identify the phase at equilibrium, enabling the design of device architectures, which exploit the topological switching characteristics of the system.
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