☆ 4.8 Review

Ferroelectric order in van der Waals layered materials

NATURE REVIEWS MATERIALS (2023)

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α-In2Se3 Nanoflakes Modulated by Ferroelectric Polarization and Pt Nanodots for Photodetection

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ACS APPLIED NANO MATERIALS (2019)

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Article Nanoscience & Nanotechnology

Steep-slope hysteresis-free negative capacitance MoS2 transistors

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NATURE NANOTECHNOLOGY (2018)

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Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In2Se3

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ACS NANO (2018)

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Observation of Quasi-Two-Dimensional Polar Domains and Ferroelastic Switching in a Metal, Ca3Ru2O7

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NANO LETTERS (2018)

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Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor

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NANO LETTERS (2018)

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Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3

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NANO LETTERS (2018)

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Room-temperature ferroelectricity and a switchable diode effect in two-dimensional alpha-In2Se3 thin layers

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NANOSCALE (2018)

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Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

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PHYSICAL REVIEW LETTERS (2018)

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Room temperature in-plane ferroelectricity in van der Waals In2Se3

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ACS APPLIED MATERIALS & INTERFACES (2018)

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Phase-Engineering-Driven Enhanced Electronic and Optoelectronic Performance of Multilayer In2Se3 Nanosheets

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Atmospheric and Long-term Aging Effects on the Electrical Properties of Variable Thickness WSe2 Transistors

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ACS APPLIED MATERIALS & INTERFACES (2018)

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Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

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APPLIED PHYSICS LETTERS (2018)

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Controlled Crystal Growth of Indium Selenide, In2Se3, and the Crystal Structures of alpha-In2Se3

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INORGANIC CHEMISTRY (2018)

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Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction

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Ferroelectric switching of a two-dimensional metal

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Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

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NATURE COMMUNICATIONS (2018)

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Room-Temperature Ferroelectricity in Hexagonally Layered α-In2Se3 Nanoflakes down to the Monolayer Limit

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ADVANCED FUNCTIONAL MATERIALS (2018)

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Origin of Two-Dimensional Vertical Ferroelectricity in WTe2 Bilayer and Multilayer

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JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2018)

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Stacking-Dependent Magnetism in Bilayer CrI3

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NANO LETTERS (2018)

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Tuning the ferroelectric-to-paraelectric transition temperature and dipole orientation of group-IV monochalcogenide monolayers

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PHYSICAL REVIEW B (2018)

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Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions

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NANO LETTERS (2017)

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Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

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NANO LETTERS (2017)

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Layer-dependent electronic properties of phosphorene-like materials and phosphorenebased van der Waals heterostructures

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NANOSCALE (2017)

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Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

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NATURE COMMUNICATIONS (2017)

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Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

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NATURE COMMUNICATIONS (2017)

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Review Physics, Applied

Ferroelectric or non-ferroelectric: Why so many materials exhibit ferroelectricity on the nanoscale

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Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

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Off-plane polarization ordering in metal chalcogen diphosphates from bulk to monolayer

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PHYSICAL REVIEW B (2017)

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Binary Compound Bilayer and Multilayer with Vertical Polarizations: Two-Dimensional Ferroelectrics, Multiferroics, and Nanogenerators

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The negative piezoelectric effect of the ferroelectric polymer poly(vinylidene fluoride)

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Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

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APPLIED PHYSICS LETTERS (2016)

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Size-effect in layered ferrielectric CuInP2S6

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APPLIED PHYSICS LETTERS (2016)

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Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

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Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues

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Possibility of combining ferroelectricity and Rashba-like spin splitting in monolayers of the 1T-type transition-metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te)

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Gate Controlled Photocurrent Generation Mechanisms in High-Gain In2Se3 Phototransistors

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Metallic 1T phase MoS2 nanosheets as supercapacitor electrode materials

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Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure

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PHYSICAL REVIEW B (2015)

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Negative capacitance in a ferroelectric capacitor

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Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets

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Emergence of Ferroelectricity at a Metal-Semiconductor Transition in a 1T Monolayer of MoS2

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Giant Electroresistance of Super-tetragonal BiFeO3-Based Ferroelectric Tunnel Junctions

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Molecular modeling of the piezoelectric effect in the ferroelectric polymer poly(vinylidene fluoride) (PVDF)

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A ferroelectric-like structural transition in a metal

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Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers

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APPLIED PHYSICS LETTERS (2012)

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Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr0.2Ti0.8)O3 Films

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Nanoscale domain patterns in ultrathin polymer ferroelectric films

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New Highly Polar Semiconductor Ferroelectrics through d8 Cation-O Vacancy Substitution into PbTiO3: A Theoretical Study

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JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2008)

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Atomic-scale study of electric dipoles near charged and uncharged domain walls in ferroelectric films

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Polarization relaxation induced by a depolarization field in ultrathin ferroelectric BaTiO3 capacitors -: art. no. 237602

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PHYSICAL REVIEW LETTERS (2005)

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Dielectric and ultrasonic investigation of phase transition in CuInP2S6 crystals

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Disordering effect on optical absorption processes in CuInP2S6 layered ferrielectrics

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PHYSICA STATUS SOLIDI B-BASIC RESEARCH (2003)

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Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films

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PHYSICAL REVIEW B (2002)

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Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

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IEEE ELECTRON DEVICE LETTERS (2002)

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Electronic band structure of the layered compound Td-WTe2

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PHYSICAL REVIEW B (2000)

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Dielectric measurement study of lamellar CuInP2Se6: successive transitions towards a ferroelectric state via an incommensurate phase?

YM Vysochanskii et al.

SOLID STATE COMMUNICATIONS (2000)

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