期刊
MATERIALS RESEARCH EXPRESS
卷 9, 期 10, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2053-1591/ac9959
关键词
thin films; cobalt nitride; atomic layer deposition; HAXPES; XPS
资金
- Sustainable Energy Authority of Ireland Research Development and Demonstration Fund [18/RDD/185]
- National Institute of Standards and Technology (NIST)
- DOE Office of Science by Brookhaven National Laboratory [DE-SC0012704]
This study utilizes ALD and photoemission characterization techniques to analyze the growth and properties of cobalt nitride, providing important insights for optimizing plasma-assisted ALD processes.
State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies. The growth process is characterised using an in situ cycle-by-cycle methodology to identify the main factors which underpin optimal material growth. The role of co-reactant dosing and substrate temperature is analysed in detail to demonstrate the impact these parameters have on the overall composition of the film. The in situ approach, combined with high-energy synchrotron-based photoemission studies of the resulting films, enables understanding of the bulk chemical properties without need for physical removal of material by sputtering. The results provide an insight into optimising plasma assisted ALD processes for deposition of cobalt nitride, and strategies for minimizing carbon incorporation into the film from the precursor ligands.
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