Reaction-Time-Dependent Opto-Electrical Properties of Graphene Oxide

The reaction-time-dependent synthesis of graphene oxide (GO) was carried out using a modified Hummer's method. The drop-casting method was used to coat GO films on a glass substrate. Various techniques, including scanning electron microscopy, X-ray diffraction, UV-Vis spectroscopy (UV-Vis), Fourier transform infrared spectroscopy, and current-voltage characteristics, were performed to obtain the morphological, structural, optical, and electrical properties of GO. Morphological structural observations revealed that more oxygen functional groups were present as the reaction time increased from 24 to 96 h, which was confirmed by the optical properties of GO thin films. The resistivity of the as-deposited films increased from 9.74 x 10(6) to 26.85 x 10(6) omega center dot cm as the reaction time increased. The optimized reaction time with a resistivity of 12.13 x 10(6) omega center dot cm was 48 h, as demonstrated by morphological and optical data.

Automated summary

A modified Hummer's method was used to synthesize graphene oxide (GO) in a reaction-time-dependent manner, and the drop-casting method was used to coat GO films on a glass substrate. Various techniques were employed to study the morphological, structural, optical, and electrical properties of GO. It was found that the amount of oxygen functional groups and the resistivity of the as-deposited films increased with increasing reaction time. Based on morphological and optical data, the optimized reaction time was determined to be 48 hours.