ε-Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

The explosion of mobile data from the internet of things (IoT) is leading to the emergence of 5G technology with dramatic frequency band expansion and efficient band allocations. Along with this, the demand for high-performance filters for 5G radio frequency (RF) front-ends keeps growing. The most popular 5G filters are constructed by piezoelectric resonators based on AlN semiconductor. However, AlN possesses a piezoelectric constant d(33) lower than 5 pm V-1 and it becomes necessary to develop novel semiconductors with larger piezoelectric constant. In this work, it is shown that strong piezoelectricity exists in epsilon-Ga2O3. High-quality phase-pure epsilon-Ga2O3 thin films with a relatively low residual stress are prepared. A switching spectroscopy piezoelectric force microscope (SS-PFM) measurement is carried out and the piezoelectric constant d(33) of epsilon-Ga2O3 is determined to be approximate to 10.8-11.2 pm V-1, which is twice as large as that of AlN. For the first time, surface acoustic wave (SAW) resonators are demonstrated on the epsilon-Ga2O3 thin films and different vibration modes resonating in the GHz range are observed. The results suggest that epsilon-Ga2O3 is a great material candidate for application in piezoelectric devices, thanks to its wide bandgap, strong piezoelectric property, small acoustic impedance, and low residual stress.

Automated summary

The explosion of mobile data from the internet of things (IoT) is driving the development of 5G technology, which requires high-performance filters. This study explores the potential of epsilon-Ga2O3, a semiconductor with a higher piezoelectric constant than AlN, for use in piezoelectric devices. The results demonstrate the suitability of epsilon-Ga2O3 for application in 5G radio frequency (RF) front-ends.