High-Performance and Environmentally Robust Multilevel Lead-Free Organotin Halide Perovskite Memristors

With a striking explosion of digital information, organic-inorganic halide perovskite (OHP) memristors have been regarded as a promising solution to break the von Neumann bottleneck as the nonvolatile computing-in-memory architecture. However, toxicity and stability under ambient conditions are two critical issues for practical applications. Here, lead-free MASnI(3) (MASI) perovskites are reported with improved resistive switching (RS) performance via defects passivating by introducing PEACl. In-Sn/PEACl-MASI/PEDOT:PSS/ITO memristor arrays (10 x 10) exhibit reproducible RS with low SET/RESET voltage (V-SET/V-RESET, +0.58/-0.49 V), ultrahigh ON/OFF ratio (8.5 x 10(3)), stable endurance (2 x 10(3) cycles), excellent retention (2 x 10(4) s), high device yield (88%), and multilevel storage. RS remains robust in harsh environments, including high temperature and humidity, long-term light irradiation, and open-air conditions. Importantly, a complete physical simulation model that quantitatively and accurately describes RS in vacancy concentration, temperature, and electric potential is proposed originating from conductive filaments formation/rupture. Additionally, PEACl-MASI memristors are successfully fabricated on polyethylene terephthalate (PET) and Si substrates to explore the potential for large-scale application on different substrates. The PEACl-MASI memristors provide an opportunity to develop the next generation of high-performance and environmentally robust multilevel information storage devices.

Automated summary

This research reports the improved resistive switching performance of lead-free MASnI(3) perovskites by introducing PEACl, achieving stable and reliable performance. Additionally, a complete physical simulation model is proposed to describe the formation and rupture of conductive filaments, providing a theoretical basis for further performance optimization.