Wafer-Scale PLD-Grown High-κ GCZO Dielectrics for 2D Electronics

Oxide dielectrics, such as HfO2, Ai(2)O(3), etc, are widely used to improve the performance of 2D semiconductors in electronic devices. However, future low-power electronic devices need a higher dielectric constant (x) to reduce the leakage current, and these super-high-kappa materials are challenging to produce on wafer-scale. Here, the preparation of wafer-scale (Ga, Cu) co-doping ZnO films is reported with super-high dielectric constant (kappa> 50) and good homogeneity by a pulsed laser deposition method. By regulating the (Ga, Cu) co-doping concentration, the dielectric constants can range from 9 to 207. In addition, the performance of SnS2 field-effect transistor reveals that the high-kappa Al2O3 /GCZO gate dielectric stack is suitable for 2D electronic devices. This GCZO dielectric films not only show higher kappa than other conventional dielectrics in terms of compatibility to CMOS processes, but also keep their comparative advantages in the fabrication of high-performance electronic devices over conventional dielectrics.

Automated summary

This study reports a method for preparing wafer-scale (Ga, Cu) co-doping ZnO films with super-high dielectric constant and good homogeneity. The research found that the dielectric constant can vary over a wide range by adjusting the co-doping concentration. Experimental results also demonstrated that the Al2O3 / GCZO gate dielectric stack is suitable for 2D electronic devices and has advantages in terms of compatibility to CMOS processes and fabrication of high-performance electronic devices over conventional dielectrics.