CNOT Gates for Fluxonium Qubits via Selective Darkening of Transitions

We analyze the cross-resonance effect for fluxonium circuits and investigate a two-qubit gate scheme based on selective darkening of a transition. In this approach, two microwave pulses at the frequency of the target qubit are applied simultaneously with a proper ratio between their amplitudes to achieve a controlled-NOT operation. We study in detail coherent gate dynamics and calculate gate error. With nonunitary effects accounted for, we demonstrate that gate error below 10-4 is possible for realistic hardware parameters. This number is facilitated by long coherence times of computational transitions and strong anharmonicity of fluxoniums, which easily prevents excitation to higher excited states during the gate microwave drive.

Automated summary

We analyze the cross-resonance effect for fluxonium circuits and propose a two-qubit gate scheme based on selective darkening of a transition. By applying two microwave pulses at the target qubit frequency with a proper amplitude ratio, a controlled-NOT operation can be achieved. Gate error is calculated, and with the consideration of nonunitary effects, gate error below 10^-4 is shown to be possible for realistic hardware parameters.