4.7 Article

Efficient and Facile Synthetic Route of MoO3:MoS2 Hybrid Thin Layer via Oxidative Reaction of MoS2 Nanoflakes

期刊

NANOMATERIALS
卷 12, 期 18, 页码 -

出版社

MDPI
DOI: 10.3390/nano12183171

关键词

hybrid layer; thin films; 2D nanomaterials; transition metal dichalcogenide; molybdenum disulfide; molybdenum trioxide; partial oxidation

资金

  1. le Partenariat Hubert Curien (PHC) franco-marocain Toubkal project [41406ZC]
  2. le Centre National de la Recherche Scientifique et Technique CNRST
  3. French Contrat Plan Etat-Region
  4. European Regional Development Fund of Pays de la Loire
  5. CIMEN Electron Microscopy Center in Nantes

向作者/读者索取更多资源

In this study, MoO3:MoS2 hybrid thin layers were synthesized through partial oxidation of MoS2 under darkness conditions. Liquid-phase exfoliation was used to achieve uniform MoS2 nanoflakes and high reproducibility of results. XPS analyses confirmed the presence of MoO3, MoS2, and MoOxSy in the hybrid layer, while optical absorbance showed redshifted absorption peaks and new peaks in the near-infrared region.
In the present study, MoO3:MoS2 hybrid thin layers have been synthesized through partial oxidation of MoS2. We have demonstrated that the reaction requires darkness conditions to decrease the oxidation rate, thus obtaining the hybrid, MoO3:MoS2. A simple liquid-phase exfoliation (LPE) is carried out to achieve homogenous MoS2 nanoflakes and high reproducibility of the results after MoS2 oxidation. XPS analyses reveal the presence of MoO3, MoS2, and MoOxSy in the hybrid layer. These results are also confirmed by X-ray diffraction and high-resolution TEM. Optical absorbance reveals that the absorption peaks of the MoO3:MoS2 hybrid are slightly redshifted with the appearance of absorption peaks in the near-infrared region due to the defects created after the oxidation reaction. The composition and atomic percentages of each component in the hybrid layer as a function of reaction time have also been reported to give perspective guides for improving electronic and optoelectronic devices based on 2D-MoS2.

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