Study on Modulation Bandwidth of GaN-Based Micro-Light-Emitting Diodes by Adjusting Quantum Well Structure

GaN-based blue micro-light-emitting diodes (mu-LEDs) with different structures were designed, of which the effect of quantum well (QW) structure on modulation bandwidth was numerically explored. By using trapezoidal QWs, the quantum-confined Stark effect (QCSE) can be reduced, leading to an enhanced electron-hole wave function overlap, thereby increasing the recombination rate and reducing the differential carrier lifetime. In addition, the improved hole transport also creates favorable conditions for shortening the differential carrier lifetime. Furthermore, by comparing with traditional mu-LEDs with different thicknesses of QW, the modulation bandwidth of mu-LEDs with trapezoidal QWs exhibits a large advantage at lower current densities of below 2 kA/cm(2).

Automated summary

In this study, GaN-based blue micro-light-emitting diodes (mu-LEDs) with different structures were designed, and the effect of quantum well (QW) structure on modulation bandwidth was explored. It was found that trapezoidal QWs can enhance modulation bandwidth and improve carrier lifetime.