4.7 Article

Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors

期刊

NANOMATERIALS
卷 12, 期 21, 页码 -

出版社

MDPI
DOI: 10.3390/nano12213820

关键词

complementary inverter; low power; graphene/carbon-nanotube junction; barristor

资金

  1. Konkuk University

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This study reports a graphene/carbon-nanotube electronic device that can be utilized in the fabrication of complementary logic circuits. A complementary inverter is designed and demonstrated, showing low power consumption and excellent switching characteristics.
The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS2 barristor, and its characteristics are reported. A sub-nW (similar to 0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of similar to 15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.

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