期刊
NANOMATERIALS
卷 12, 期 21, 页码 -出版社
MDPI
DOI: 10.3390/nano12213746
关键词
template; crystallinity; vertical few-layer graphene; field emission
类别
资金
- National Key Basic Research Program of China [2019YFA0210200, 2019YFA0210201, 2019YFA0210202]
- National Natural Science Foundation of China [61874142]
- Science and Technology Department of Guangdong Province
- Fundamental Research Funds for the Central Universities
This study successfully grew high crystallinity VFLG using a template method, showing excellent field emission performance and current density. It provides a simple and effective method for realizing the pattern growth of VFLG.
Controllable synthesis of high crystallinity, low defects vertical few-layer graphene (VFLG) is significant for its application in electron emission, sensor or energy storage, etc. In this paper, a template method was introduced to grow high crystallinity VFLG (HCVFLG). A copper mask acted as a template which has two effects in the high-density plasma enhanced deposition which are protecting VFLG from ion etching and creating a molecular gas flow to assist efficient growth. Raman and TEM results confirmed the improved crystallinity of VFLG with the assistance of a copper mask. As a field emitter, the HCVFLG has a large field emission current and a low turn-on field. The maximum field emission current of a single HCVFLG sheet reaches 93 mu A which is two orders of magnitude higher than VFLG grown without a mask. The maximum current density of HCVFLG film reached 67.15 mA/cm(2) and is 2.6 times of VFLG grown without a mask. The vacuum breakdown mechanism of HCVFLG was contacted interface damage resulting in VFLG detaching from the substrate. This work provides a practical strategy for high-quality VFLG controllable synthesis and provides a simple method to realize the pattern growth of VFLG.
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