Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition

The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10(-7)-10(-3) mbar and 900-980 degrees C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 degrees C, nanocrystalline hBN films with a lateral crystallite size of similar to 2-3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 +/- 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 degrees C increases the average crystallite size and leads to the formation of 3-10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth.

Automated summary

In this study, the growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates using high-vacuum chemical vapor deposition from borazine was systematically investigated for the first time. The research findings suggest that the process pressure and growth temperature have certain influences on the morphology, growth rate, and crystalline quality of hBN films.