Effects of Heavy Ion Irradiation on the Thermoelectric Properties of In-2(Te1-xSex)(3) Thin Films

Ion irradiation is an exceptionally effective approach to induce controlled surface modification/defects in semiconducting thin films. In this investigation, ion-irradiated Se-Te-based compounds exhibit electrical transport properties that greatly favor the transformation of waste heat into electricity. Enhancements of both the Seebeck coefficient (S) and the power factor (PF) of In-2(Te0.98Se0.02)(3) films under 120 MeV Ni9+ ion irradiation were examined. The maximum S value of the pristine film was about similar to 221 mu A/K-1. A significantly higher S value of about similar to 427 mu A/K-1 was obtained following irradiation at 1 x 10(13) ions/cm(2). The observed S values suggest the n-type conductivity of these films, in agreement with Hall measurements. Additionally, Ni ion irradiation increased the PF from similar to 1.23 to 4.91 mu W/K(2)m, demonstrating that the irradiated films outperformed the pristine samples. This enhancement in the TE performance of the In-2(Te0.98Se0.02)(3) system is elucidated by irradiation-induced effects that are revealed by structural and morphological studies.

Automated summary

Ion irradiation is an effective method for inducing controlled surface modification/defects in semi-conducting thin films. In this study, Se-Te-based compounds exhibited improved electrical transport properties under ion irradiation, leading to enhanced Seebeck coefficient and power factor. The irradiated films showed better thermoelectric performance compared to the pristine samples, with increased Seebeck coefficient and power factor values.