期刊
ADVANCED MATERIALS
卷 28, 期 3, 页码 518-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201501967
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资金
- Center for Advanced Soft-Electronics - MSIP [2013M3A6A5073183]
- National Research Foundation of Korea (NRF) grant - Korean Government (MSIP) [NRF-2014R1A2A2A01007159]
- National Natural Science Foundation of China [61504173]
- National Research Foundation of Korea [2013M3A6A5073183] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The universal role of high-k fluorinated dielectrics in assisting the carrier transport in transistors for a broad range of printable semiconductors is explored. These results present general rules for how to design dielectric materials and achieve devices with a high carrier concentration, low disorder, reliable operation, and robust properties.
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