4.8 Article

Large Enhancement of Carrier Transport in Solution-Processed Field-Effect Transistors by Fluorinated Dielectric Engineering

期刊

ADVANCED MATERIALS
卷 28, 期 3, 页码 518-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201501967

关键词

-

资金

  1. Center for Advanced Soft-Electronics - MSIP [2013M3A6A5073183]
  2. National Research Foundation of Korea (NRF) grant - Korean Government (MSIP) [NRF-2014R1A2A2A01007159]
  3. National Natural Science Foundation of China [61504173]
  4. National Research Foundation of Korea [2013M3A6A5073183] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

The universal role of high-k fluorinated dielectrics in assisting the carrier transport in transistors for a broad range of printable semiconductors is explored. These results present general rules for how to design dielectric materials and achieve devices with a high carrier concentration, low disorder, reliable operation, and robust properties.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据