Electronic Characteristics of Ultra-Thin Passivation Layers for Silicon Photovoltaics

Surface passivating thin films are crucial for limiting the electrical losses during charge carrier collection in silicon photovoltaic devices. Certain dielectric coatings of more than 10 nm provide excellent surface passivation, and ultra-thin (<2 nm) dielectric layers can serve as interlayers in passivating contacts. Here, ultra-thin passivating films of SiO2, Al2O3, and HfO2 are created via plasma-enhanced atomic layer deposition and annealing. It is found that thin negatively charged HfO2 layers exhibit excellent passivation properties-exceeding those of SiO2 and Al2O3-with 0.9 nm HfO2 annealed at 450 degrees C providing a surface recombination velocity of 18.6 cm s(-1). The passivation quality is dependent on annealing temperature and layer thickness, and optimum passivation is achieved with HfO2 layers annealed at 450 degrees C measured to be 2.2-3.3 nm thick which give surface recombination velocities <= 2.5 cm s(-1) and J(0) values of approximate to 14 fA cm(-2). The superior passivation quality of HfO2 nanolayers makes them a promising candidate for future passivating contacts in high-efficiency silicon solar cells.

Automated summary

Ultra-thin passivating films of SiO2, Al2O3, and HfO2 were created through plasma-enhanced atomic layer deposition and annealing. It was found that thin negatively charged HfO2 layers exhibited excellent passivation properties, making them a promising candidate for future passivating contacts in high-efficiency silicon solar cells.