4.5 Article

Multiband Effects in the Superconducting Phase Diagram of Oxide Interfaces

期刊

ADVANCED MATERIALS INTERFACES
卷 9, 期 29, 页码 -

出版社

WILEY
DOI: 10.1002/admi.202201392

关键词

field-effect device; multiband; oxide interfaces; superconductivity

资金

  1. French CNRS
  2. ANR PRC (QUANTOP)
  3. French RENATECH network (French national nanofabrication platform)
  4. DGA
  5. project Quantox of QuantERA ERA-NET Cofund in Quantum Technologies [731473]
  6. COST project Nanocohybri-Action [CA16218]

向作者/读者索取更多资源

This study elaborates on a generic scenario for the superconducting phase diagram of SrTiO3-based interfaces. The optimal doping point of maximum critical temperature (Tc) is attributed to the transition between different superconducting states. The dependence of Tc on carrier density exhibits a bifurcation phenomenon, which can be controlled by the details of the doping execution. Different doping methods result in different filling behaviors and superconducting states, providing a generic explanation for the dome-shaped superconducting phase diagram.
A dome-shaped phase diagram of superconducting critical temperature upon doping is often considered as a hallmark of unconventional superconductors. This behavior, observed in SrTiO3-based interfaces, whose electronic density is controlled by field-effect, has not been explained unambiguously yet. Here, a generic scenario for the superconducting phase diagram of these oxide interfaces is elaborated based on transport experiments on a double-gate LaAlO3/SrTiO3 field-effect device and Schrodinger-Poisson numerical simulations of the quantum well. The optimal doping point of maximum T-c is ascribed to the transition between a single-gap and a fragile two-gap s(+/-)-wave superconducting state involving bands of different orbital character. Close to this point, a bifurcation in the dependence of T-c on the carrier density, which can be controlled by the details of the doping execution, is observed experimentally and reproduced by numerical simulations. Where doping with a back-gate triggers the filling of a new dxy${d_{{\rm{xy}}}}$ subband and initiates the overdoped regime, doping with a top-gate delays the filling of the subband and maintains the 2D electron gaz in the single-gap state of higher T-c. Such a bifurcation, whose branches can be followed reversibly, provides a generic explanation for the dome-shaped superconducting phase diagram that could be extended to other multiband superconducting materials.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据