Continuous-Wave Current Injected InGaN/GaN Microdisk Laser on Si(100)

GaN-based microdisk laser on Si can be adopted as an efficient on-chip laser source for Si photonics. However, most of the reported microdisk lasers are integrated on Si(111), which is not fully compatible with cost-effective mainstream complementary metal-oxide-semiconductor (CMOS) foundries. In this study, GaN-based microdisk laser monolithically integrated on Si(100) is carefully designed and fabricated thorough wafer bonding and substrate removal. Moreover, it shows 66.5% lower junction temperature due to reduced electric injection power and thermal resistance as compared with the reported conventional GaN-based microdisk lasers grown on Si(111). The result is the room-temperature continuous-wave current-injected lasing of GaN-based microdisk laser on Si(100), showing a narrow spectral line width of about 0.16 nm and an obvious turning point in the optical output power versus injection current curve.

Automated summary

GaN-based microdisk laser monolithically integrated on Si(100) with lower junction temperature and narrow spectral line width was successfully fabricated using wafer bonding and substrate removal.