期刊
NANO ENERGY
卷 102, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.nanoen.2022.107685
关键词
ZnO based film; Donor-acceptor co-doping; Anomalous photovoltaic effect; High fill factor
类别
资金
- National Natural Science Foundation of China [52177209, 51802056]
- Science Foundation of the National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, and Science Foundation of Key Laboratory of Micro-systems and Micro-Structures Manufacturing of Ministry of Education
- Science Foundation of the National Key Laboratory of Science and Technology on Advanced Composites in Special Environments
This study reports the high performance anomalous photovoltaic effect observed under white light in Zn1-2x(FexLix)O films fabricated by a low-cost sol-gel process. The photovoltaic effects are found to be closely related to the ferroelectricity of the films, and a photo-to-electron conversion model is proposed to explain the mechanism.
Integrating high fill factor (FF) with above-bandgap photovoltage has been of fundamental importance in building high-power conversion efficiency (PCE) devices based on anomalous photovoltaic effect. Herein, the discovery of high performance anomalous photovoltaic effect under white light in designed Zn1-2x(FexLix)O films fabricated by a low-cost sol-gel process is reported, where above-bandgap photovoltage, improved FF, a switchable photoresponse of 34.1 mA/W, and a PCE of 10.3 % are obtained. It is found that the photovoltaic effects are closely related to the ferroelectricity of the co-doped films. A mechanism based on serial connection of poled ferroelectric regions and junctions is proposed to interpret the photovoltaic effects with high FF in Fe3+-Li+ co-doped ZnO films, where the junction is formed between the ferroelectric and weak-ferroelectric regions. This photo-to-electron conversion model suggests a route to design and fabricate cost-efficient solar cell and other optoelectronic devices.
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