Adaptive photocurrent generation of ReS2-2D Te heterostructure

In this study, we analyzed the photocurrent generation mechanism (PGM) of a heterostructure comprising n-type ReS2 and p-type two-dimensional (2D) Te. The PGM of the integrated structure was not solely driven by the photovoltaic effect, which is attributed to the built-in potential invoked by the bandgap mismatch and Fermi level difference. The PGM was manipulated and dramatically varied as the source-drain bias (Vds) and backgate bias (Vgs) were modulated. Under the control of Vds and Vgs, the dominant photocurrent generation in our heterostructure was attributed to photovoltaic (PV), photothermoelectric (PTE) effects, and their combinations PV+PTE. In addition, the photocurrent hotspot varied depending on the bias conditions. Our results provide new insights into the possibility to adapt the PGM of a conventional photovoltaic system, which can contribute to the development of multimodal detection of the incident light, extend the spectral detection range, and facilitate the design of photodetectors and energy-harvesting devices with enhanced performance.

Automated summary

This study analyzed the photocurrent generation mechanism of a heterostructure composed of n-type ReS2 and p-type 2D Te. The integrated structure's photocurrent generation was not solely driven by the photovoltaic effect, but also influenced by the built-in potential induced by bandgap mismatch and Fermi level difference. By modulating the source-drain bias and backgate bias, the dominant photocurrent generation in the heterostructure was found to be attributed to the photovoltaic and photothermoelectric effects, as well as their combinations. The results of this study provide new insights into adapting the photocurrent generation mechanism of conventional photovoltaic systems.