期刊
NANO ENERGY
卷 100, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.nanoen.2022.107489
关键词
Conjugated triblock copolymers; Cocrystallization; Molecular engineering; Organic field-effect transistors
类别
资金
- National Natural Science Foundation of China [21922503, 22173023]
- Natural Science Foundation of Shanghai [21ZR1405800]
- Shanghai Synchrotron Radiation Facility of China
The ability to control cocrystallization behavior through meticulous design and synthesis of multiblock copolymers can enhance charge transport properties, providing important guidance for the development of high-performance organic field-effect transistors (OFETs).
The ability to render the cocrystallization over microphase separation in all-conjugated block copolymers represents an important endeavor towards achieving enhanced charge transport. This, however, remains a grand challenge, particularly in all-conjugated triblock copolymers. Herein, we report the unravelling of the dependence of cocrystallization in all-conjugated triblock copolymers on a set of internal structural parameters, and more importantly, the scrutiny of the correlation of their unique cocrystalline structures to charge transport properties for organic field-effect transistors (OFETs). Specifically, a series of poly(3-butylthiophene)-block-poly (3-alkylthiophene)-block-poly(3-hexylselenophene) triblock copolymers (denoted P3BT-b-P3AT-b-P3HS) are meticulously designed and synthesized. Intriguingly, a shorter alkyl side chain length and a shorter main chain length of the central P3AT, as well as a stronger cocrystallization ability of the two outer blocks (P3BT and P3HS), are found to favor the cocrystallization of the three dissimilar blocks in P3BT-b-P3AT-b-P3HS. Notably, the charge transport properties of P3BT-b-P3AT-b-P3HS correlate strongly to their various crystalline structures, thereby imparting their utility for high-performance OFETs. This study highlights the robustness of meticulous molecular engineering of all-conjugated multiblock copolymers in tailoring their cocrystallization behavior and in turn charge transport characteristics that underpins their advances in optoelectronic materials and devices.
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