Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not only increased with the relative dielectric constant, but there is also a reduction in gate leakage. In the past, the effect of nitridation treatment on channel-length was revealed, but a channel-width effect with that treatment was not found. Sensing the different nano-node channel-width n-channel MOSFETs, the electrical characteristics of these test devices with nitridation treatments were studied and the relationship among them was analyzed. Based on measurement of the V-T, SS, G(m), I-ON, and I-OFF values of the tested devices, the electrical performance of them related to process treatment is improved, including the roll-off effect of channel-width devices. On the whole, the lower thermal budget in nitridation treatment shows better electrical performance for the tested channel-width devices.

Automated summary

The decoupled-plasma nitridation treatment process is effective in repairing trap issues during high-k gate dielectric deposition. It not only improves electrical performance and reduces gate leakage, but also has an effect on channel length.