期刊
MICROMACHINES
卷 13, 期 9, 页码 -出版社
MDPI
DOI: 10.3390/mi13091546
关键词
aluminum nitride; reactive sputtering; X-ray diffraction; X-ray photoelectron spectroscopy; hardness measurement
类别
资金
- Ministry of Science and Technology, Taiwan [MOST 110-2221-E-155-045 -MY3, MOST 110-2320-B-255-005-MY3, MOST 110-NU-E-155-001-NU]
In this study, aluminum nitride (AlN) thin films were deposited using radio frequency magnetron sputtering, and their properties were characterized. The optimal growth conditions for the AlN thin films were determined, and a gallium nitride (GaN) layer was successfully grown on an AlN thin film as a buffer layer using in situ continual sputtering. This research provides a less expensive method for growing high-quality GaN thin films for various applications.
Aluminum nitride (AlN) thin-film materials possess a wide energy gap; thus, they are suitable for use in various optoelectronic devices. In this study, AlN thin films were deposited using radio frequency magnetron sputtering with an Al sputtering target and N-2 as the reactive gas. The N-2 working gas flow rate was varied among 20, 30, and 40 sccm to optimize the AlN thin film growth. The optimal AlN thin film was produced with 40 sccm N-2 flow at 500 W under 100% N-2 gas and at 600 degrees C. The films were studied using X-ray diffraction and had (002) phase orientation. X-ray photoelectron spectroscopy was used to determine the atomic content of the optimal film to be Al, 32%; N, 52%; and O, 12% at 100 nm beneath the surface of the thin film. The film was also investigated through atomic force microscopy and had a root mean square roughness of 2.57 nm and a hardness of 76.21 GPa. Finally, in situ continual sputtering was used to produce a gallium nitride (GaN) layer on Si with the AlN thin film as a buffer layer. The AlN thin films investigated in this study have excellent material properties, and the proposed process could be a less expensive method of growing high-quality GaN thin films for various applications in GaN-based power transistors and Si integrated circuits.
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