期刊
ADVANCED MATERIALS
卷 27, 期 40, 页码 6096-6103出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201503540
关键词
GaAs; growth mechanisms; nanowires; polarity; surface energy
类别
资金
- Australian Research Council
Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111) A by atomically resolved scanning transmission electron microscopy.
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