期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 27, 期 10, 页码 10309-10319出版社
SPRINGER
DOI: 10.1007/s10854-016-5114-0
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资金
- Ministry of Sciences and Technology of China through 973-Project [2014CB660811]
- National Natural Science Foundation of China [51462027]
- Program for Innovative Research Team in Universities of Inner Mongolia Autonomous Region [NMGIRT-A1605]
- Innovation Guide Fund of Baotou [CX2015-8]
- Innovation Program of Inner Monglia University of Science and Technology [2014QNGG01]
The effects of grain size on dielectric properties, energy-storage performance and electrocaloric effect (ECE) of Pb0.85Ba0.05La0.10(Zr0.90Ti0.10)O-3 (PBLZT) antiferroelectric thick films were systematically studied. As the grain size was increased, dielectric constant of the thick films was increased, while their critical breakdown field was decreased. A giant reversible adiabatic temperature change of a dagger T = 19.9 A degrees C at room temperature was achieved in the PBLZT AFE thick film with a grain size of 0.59 A mu m. However, a huge recoverable energy-storage density of 33.6 J/cm(3) and a high efficiency of 73 % were observed in the film with the smallest grain size of 0.19 A mu m at its breakdown field, because of its excellent electric field endurance. In addition, all the samples had a low leakage current density of below 10(-6) A/cm(2) at room temperature. These results indicated that our PBLZT AFE thick films could be a promising candidate for applications in high energy-storage density capacitors and solid-cooling devices by properly controlling their grain size.
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