4.6 Article

Gate-Tunable Graphene Optical Modulator on Fiber Tip: Design and Demonstration

期刊

ADVANCED OPTICAL MATERIALS
卷 10, 期 22, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202201724

关键词

electro-optical modulator; fiber devices; field-effect transistors; graphene

资金

  1. National Natural Science Foundation of China [62135007, 61925502]

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This paper proposes and demonstrates a fiber-end-face-integrated electrically tunable optical modulator based on a graphene field-effect transistor and presents its fabrication methods. The all-fiber device offers compactness, high integration, and low insertion loss, and achieves vivid modulation through a reflecting structure. This is the first time that an all-solid gate-control modulator is directly built on a fiber facet, broadening the development of fiber-end-face integrated devices.
A fiber-end-face-integrated electrically tunable optical modulator based on graphene field-effect transistor and the fabrication technique are proposed and demonstrated. The all-fiber device features a scheme of compactness and high integration when applied to fiber optical system, as well as a low insertion loss since spatial coupling of light is avoided. A reflecting structure is used and the electro-optic modulator shows vivid modulation when gate voltage gets tuned, with maximum optical reflectance modulation depth over 1% in demonstration. To the best of the authors' knowledge, it is the first time to build an all-solid gate-control modulator directly on fiber facet. The fabrication methods introduce workflows of silicon-on-insulator processing into the optical fiber end-face micromachining domain which can be applied to more comprehensive configurations, broadening the path of fiber-end-face integrated device.

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