期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 28, 期 1, 页码 43-51出版社
SPRINGER
DOI: 10.1007/s10854-016-5490-5
关键词
-
Al incorporation into the InGaN films has been successfully attained from the cermet targets under the working temperature of 200 degrees C and output power of 120 W by the RF sputtering technique. We used energy dispersive spectroscopy to analyze the compositions of the AlxIny Ga1-x-yN, and X-ray diffractometry and atomic force microscopy had been taken to obtain the crystal structure and growth characteristics of the AlInGaN films. Composition-affected electrical properties of the films had been discussed by the Hall measurement, which also identified the incorporation of Al into the InGaN film in this work. A simple n-AlInGaN/p-Si diode is designed to illustrate the potential application of the sputtered AlInGaN in an electrical device.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据