4.6 Article

High-quality inorganic-organic perovskite CH3NH3PbI3 single crystals for photo-detector applications

期刊

JOURNAL OF MATERIALS SCIENCE
卷 52, 期 1, 页码 276-284

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SPRINGER
DOI: 10.1007/s10853-016-0329-2

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资金

  1. National Natural Science Foundation of China [51202131]
  2. Scientific Research Foundation of Shandong University of Science and Technology for Recruited Talent [2014RCJJ001]
  3. Fund of State Key Laboratory of Crystal Materials in Shandong University [KF1504]
  4. SDUST Research Fund and Joint Innovative Center for Safe and Effective Mining Technology
  5. Fundamental Research Funds of Shandong University
  6. Equipment of Coal Resources, Shandong Province [2014JQJH102]

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Single crystals of organolead trihalide perovskites (CH3NH3PbI3) are supposed to be one of the most promising materials as photo-detectors. Because of their large absorption coefficient, long-range balanced electron, and hole-transport lengths, it is considered to break through the responsivity and efficiency. To systematically investigate the potentiality as photo-detector, high-quality CH3NH3PbI3 single crystals with large size are highly demanded. In the paper, large CH3NH3PbI3 single crystals with various crystal shapes were grown from gamma-butyrolactone. At optimized precursor concentration and growth temperature, the growth rate was fixed at about 0.2 mm h(-1). Under such growth conditions, the growth steps, originated from screw dislocation on (100) facet, were revealed to be about 0.45 nm. This value is corresponded to half of the unit cell, implying the slow growth rate of (100) facet. With slow growth rate, the absorption edge of the CH3NH3PbI3 single crystal was extended to 860 nm, correlated with a calculated bandgap of similar to 1.44 eV. By depositing a pair of Au electrodes, a metal-semiconductor-metal (MSM) photo-detector on the basis of the CH3NH3PbI3 single crystal active layer (3 mm) was fabricated and its photo-response features were investigated systematically. About 2.531 A W-1 responsivity was obtained from the device under 780 nm laser illumination, while the external quantum efficiency reached to 396.20 %, better than some GaN, GaAs, and GaP photo-detectors with a MSM device structure.

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