Ultra-broadband MIR super absorber using all silicon metasurface of triangular doped nanoprisms

Thermo-electric generation offers to be a solid candidate for both dealing with the temperature problems of photo-voltaic cells and increasing its total output power. However, it requires an efficient broadband absorber to harness the power found in the near and mid-infrared regions. In this work, we discuss a new structure of nanoprisms that are made of doped silicon that acts as an ultra-broadband absorber in both regions. We also discuss the effect of the doping concentration. Additionally, we study the effect of a pure silicon thin film on top of the prisms. Finally, we're able to find an optimized structure that can absorb 92.6% of the input power from 1 to 15 mu m.

Automated summary

This study discusses a new structure of nanoprisms made of doped silicon that can act as an ultra-broadband absorber for thermo-electric generation. The effect of doping concentration and a pure silicon thin film on top of the prisms are also explored. An optimized structure is found that can absorb 92.6% of input power from 1 to 15 μm.