Study of wide bandgap SnOx thin films grown by a reactive magnetron sputtering via a two-step method

In the present work, we report on the microstructural and optoelectronic properties of SnOx thin films deposited by a reactive radio frequency magnetron sputtering. After SnOx growth by sputtering under O-2/Ar flow, we have used three different treatment methods, namely (1) as deposited films under O-2/Ar, (2) vacuum annealed films ex-situ, and (3) air annealed films ex-situ. Effects of the O-2/Ar ratios and the growth temperature were investigated for each treatment method. We have thoroughly investigated the structural, optical, electrical and morphology of the different films by several advanced techniques. The best compromise between electrical conductivity and optical transmission for the use of these SnOx films as an n-type TCO was the conditions O-2/Ar = 1.5% during the growth process, at 250 degrees C, followed by a vacuum post thermal annealing performed at 5 x 10(-4) Torr. Our results pointed out clear correlations between the growth conditions, the microstructural and optoelectronic properties, where highly electrically conductive films were found to be associated to larger grains size microstructure. Effects of O-2/Ar flow and the thermal annealing process were also analysed and discussed thoroughly.

Automated summary

In this study, SnOx thin films were deposited using reactive radio frequency magnetron sputtering, and their microstructural and optoelectronic properties were investigated. It was found that the best compromise between electrical conductivity and optical transmission can be achieved by growing the films with an O-2/Ar ratio of 1.5% at 250 degrees C and performing vacuum post thermal annealing.