期刊
JOURNAL OF MATERIALS RESEARCH
卷 31, 期 7, 页码 900-910出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/jmr.2015.374
关键词
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资金
- National Secretariat of Higher Education, Science, Technology and Innovation of Ecuador (SENESCYT)
- NSF/AFOSR EFRI-2DARE program [1433490]
- NSF [DMR1400432]
- Center for Low Energy Systems Technology (LEAST), one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- DARPA
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1400432] Funding Source: National Science Foundation
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1433490] Funding Source: National Science Foundation
Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe2 by MBE, MoSe2 on Bi2Se3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi2Te3 and a triple atomic layer of MoT2. Reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.
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