Gallium phosphide-on-insulator integrated photonic structures fabricated using micro-transfer printing

Gallium phosphide-on-insulator emerged recently as a promising platform for integrated nonlinear photonics due to its intrinsic material properties. However, current integration solutions, using direct die-to-wafer bonding, do not support spatially localized integration with CMOS circuits which induce a large and expensive footprint material need. Here we demonstrate the transfer of gallium phosphide layers to an oxidized silicon wafer using micro-transfer printing as a new approach for versatile future (hybrid) integration. Using this novel approach, we demonstrate as a proof of concept the fabrication of gallium phosphide-on-insulator ring resonators with Q-factors as high as 35,000.(c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Automated summary

We demonstrate the transfer of gallium phosphide layers to an oxidized silicon wafer using micro-transfer printing, enabling versatile integration on an insulating substrate. Proof of concept is achieved with the fabrication of gallium phosphide-on-insulator ring resonators with high Q-factors up to 35,000.