4.6 Article

Strain-Rate Dependence of Tensile Behavior in Commercial-Grade Tungsten-Effect of Recrystallization Condition

期刊

MATERIALS
卷 15, 期 17, 页码 -

出版社

MDPI
DOI: 10.3390/ma15175836

关键词

tungsten; strain rate; recrystallization; tensile deformation; dynamic recrystallization

资金

  1. R&D program of Evaluation of high temperature mechanical properties of tungsten and integrity for ITER Divertor through the Korea Institute of Fusion Energy (KFE) - Government funds, Republic of Korea [IN2208-1]
  2. Basic Science Research Program through the National Research Foundation (NRF) of the Ministry of Education of Korea [2020R1A6A3A13072835]
  3. National Research Foundation of Korea [2020R1A6A3A13072835] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

In this study, the tensile deformation behavior of double-forged and recrystallized commercial-grade tungsten was investigated under different strain rates. The results showed that the change in the dominant dynamic recrystallization mechanism has a significant effect on the ductility of the material, and the initial microstructure also plays a crucial role in the strain-rate dependence of mechanical behavior.
The tensile deformation behavior of double-forged (DF-W) and recrystallized (RX-W) commercial-grade tungsten was investigated at 700 degrees C. With increasing strain rate, the dominant dynamic recrystallization (DRX) mechanism changes from continuous dynamic recrystallization (CDRX) to discontinuous dynamic recrystallization (DDRX). For DF-W, pre-existing sub-grains promote CDRX and associated a high-DRX fraction, resulting in reduced post-necking strain under a static condition. With increasing strain rate, a shift in the restoration mechanism from CDRX to DDRX contributes to the enhanced ductility in DF-W, while RX-W shows enhanced flow hardening without a loss of ductility. These results suggest that the strain-rate dependence of mechanical behavior depends on the initial microstructure.

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