High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors

Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO3 is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the good response of MoS2 to visible light, we obtained a field effect transistor for photodetection. In general, the device exhibits a threshold voltage near 0 V, Ion/Ioff ratio of 10(5), electron mobility about 85 cm(2) V-1 s(-1) and a good response to visible light, the responsivity is near 5 A/W at low laser power, which shows that MoO3 is a potential material as gate dielectric.

Automated summary

Two-dimensional van der Waals crystals (2D vdW) are potential materials to overcome the physical limitations caused by size scaling. In this study, vdW metal oxide MoO3 is used as the gate dielectric in a 2D field-effect transistor (FET). The device shows a threshold voltage near 0 V, high Ion/Ioff ratio, and good response to visible light, indicating the potential of MoO3 as a gate dielectric material.