Investigation of analog resistive switching in ZrO2 nanostructured film

In this article, we report the synthesis of Zirconium Oxide (ZrO2) nanostructure by hydrothermal method and fabrication of resistive switching device [FTO/ZrO2/Ag] using spray coated ZrO2 nanostructured film. The XRD spectrum of the film indicates the formation of a single-phase ZrO2 nanostructure. I-V measurement of the fabricated device shows gradual set and reset at 0.8 and - 0.7 V, respectively, which confirms the presence of analog switching in the device. The conduction mechanism has been explored with a I-V fitting model in high resistive state and low resistive state, respectively. In high resistive state, the device stays in the ohmic region at lower bias however at higher bias due to filling of available traps the electrical transport is dominated by space charge limited conduction (SCLC). On the other hand, in low resistive state, charge carriers are detrapped and the electrical conduction process is again governed by SCLC conduction.

Automated summary

In this article, the synthesis of ZrO2 nanostructure and the fabrication of resistive switching device [FTO/ZrO2/Ag] using the hydrothermal and spray coating methods are reported. The results show that the fabricated device exhibits gradual set and reset at 0.8V and -0.7V, respectively, confirming the presence of analog switching. The conduction mechanism in high resistive state and low resistive state has been explored using an I-V fitting model.