4.8 Article

Low-bias photoelectrochemical water splitting via mediating trap states and small polaron hopping

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NATURE COMMUNICATIONS
卷 13, 期 1, 页码 -

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NATURE PORTFOLIO
DOI: 10.1038/s41467-022-33905-6

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  1. Hong Kong Research Grant Council (RGC) General Research Fund (GRF) [CityU 11305419, CityU 11306920, CityU 11308721]
  2. General Program of Science and Technology Innovation Committee of Shenzhen Municipality [JCYJ20190808181805621]

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This study investigates the effect of phosphorus doping on BiVO4 photoanode for low-bias photoelectrochemical water splitting. The results show that phosphorus-doped BiVO4 photoanode exhibits high separation efficiency, outperforming other metal oxides. The mechanistic understanding gained from this research contributes to enhancing the performance of photoactive metal oxides.
Metal oxides are promising for photoelectrochemical (PEC) water splitting due to their robustness and low cost. However, poor charge carrier transport impedes their activity, particularly at low-bias voltage. Here we demonstrate the unusual effectiveness of phosphorus doping into bismuth vanadate (BiVO4) photoanode for efficient low-bias PEC water splitting. The resulting BiVO4 photoanode shows a separation efficiency of 80% and 99% at potentials as low as 0.6 and 1.0 V-RHE, respectively. Theoretical simulation and experimental analysis collectively verify that the record performance originates from the unique phosphorus-doped BiVO4 configuration with concurrently mediated carrier density, trap states, and small polaron hopping. With NiFeOx cocatalyst, the BiVO4 photoanode achieves an applied bias photon-to-current efficiency of 2.21% at 0.6 V-RHE. The mechanistic understanding of the enhancement of BiVO4 properties provides key insights in trap state passivation and polaron hopping for most photoactive metal oxides. While photoelectrochemical water splitting produces fuel from solar energy, a large fraction of photoanode photoexcited charge carriers cannot be extracted efficiently at low bias voltages. Here, authors improve the charge transport in P-doped BiVO4 by mediating polaron hopping and trap states.

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