期刊
NATURE COMMUNICATIONS
卷 13, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41467-022-32605-5
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资金
- National Key Research and Development Program of China [2016YFB0700702]
- Shenzhen Science and Technology Innovation Committee [JCYJ20210324142010030]
- National Natural Science Foundation of China [51402118, 51502101, 61674063]
- Guangxi Scientific Base & Talent Special Project [AD20297084]
- Fundamental Research Funds for the Central Universities [2021yjsCXCY055]
We report a two-dimensional intrinsic ferromagnetic crystal Fe3GaTe2 with strong ferromagnetism above room temperature and large perpendicular magnetic anisotropy. This crystal exhibits record-high Curie temperature, high saturation magnetic moment, large PMA energy density, and large anomalous Hall angle at room temperature. Room-temperature anomalous Hall devices and direct magnetic domains imaging based on Fe3GaTe2 nanosheet have been realized.
The absence of two-dimensional (2D) van der Waals (vdW) ferromagnetic crystals with both above-room-temperature strong intrinsic ferromagnetism and large perpendicular magnetic anisotropy (PMA) severely hinders practical applications of 2D vdW crystals in next-generation low-power magnetoelectronic and spintronic devices. Here, we report a vdW intrinsic ferromagnetic crystal Fe3GaTe2 that exhibits record-high above-room-temperature Curie temperature (T-c, similar to 350-380 K) for known 2D vdW intrinsic ferromagnets, high saturation magnetic moment (40.11 emu/g), large PMA energy density (similar to 4.79 x 10(5)J/m(3)), and large anomalous Hall angle (3%) at room temperature. Such large room-temperature PMA is better than conventional widely-used ferromagnetic films like CoFeB, and one order of magnitude larger than known 2D vdW intrinsic ferromagnets. Room-temperature thickness and angledependent anomalous Hall devices and direct magnetic domains imaging based on Fe3GaTe2 nanosheet have been realized. This work provides an avenue for room-temperature 2D ferromagnetism, electrical control of 2D ferromagnetism and promote the practical applications of 2D-vdW-integrated spintronic devices.
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