Effect of water film on the nano-scratching process of 4H-SiC under the constant load

The effects of water film and scratching load on tribological properties are investigated by molecular dynamics simulation. Water film is found to reduce the average friction coefficient and enhance heat dissipation of scratching process. The long dislocations in 4H-SiC are related to the formation of continuous and stable Si-Si bonds, and the water film can inhibit the formation of dislocations by affecting Si-Si bonds. Scratching in water-wetted environments has a positive effect on improving surface quality and reducing sub-surface damage, but has a negative impact on the material removal rate. The effect of increasing load is opposite to that of adding water. These results confirm the lubrication effect of water film in global planarization process from a theoretical perspective.

Automated summary

The effects of water film and scratching load on tribological properties were investigated using molecular dynamics simulation. The results showed that water film reduces the friction coefficient and enhances heat dissipation during scratching. The presence of water film inhibits the formation of dislocations by affecting the formation of Si-Si bonds. Scratching in a water-wetted environment improves surface quality and reduces sub-surface damage, but negatively affects material removal rate. The effect of increasing load is opposite to that of adding water.