Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure

The resistive random access memory with self-rectifying behavior is one of the most effective to suppress the crosstalk current problem in crossbar array architectures. In this study, a p-type delafossite CuCrO2 thin film is fabricated on an n-type silicon (n-Si) substrate, and the resistive switching (RS) behavior of the Au/CuCrO2/n-Si device is investigated in detail. The heterostructure exhibits repeatable bipolar RS with self-rectifying behavior. The bipolar RS behavior can be attributed to the trapping/detrapping of charge carriers in oxygen vacancies at the p-CuCrO2/n-Si interface. The current-voltage characteristics indicate that the self-rectifying behavior in the low resistance state is derived from the Schottky-like barrier at the interface of p-CuCrO2/n-Si. These results provide a potential utilization of resistive random access memory with self-rectifying behavior in p-type delafossite-based heterostructures.

Automated summary

In this study, the resistive switching behavior of a p-type delafossite CuCrO2 thin film on an n-type silicon substrate was investigated. The results showed that the heterostructure exhibited repeatable bipolar resistive switching with self-rectifying behavior, which can effectively suppress the crosstalk current problem in crossbar array architectures.