Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme

We present a simulation framework to simulate the switching behavior of Ag/a-SiO2 conductive bridging random access memories (CBRAM). Whereas the dynamics of the switching process is investigated with classical molecular dynamics simulations using a force-field, the electrical properties are determined through ab initio calculations. With a structural analysis of the oxide, we shed light on the switching mechanism, which relies on preferred channels containing wide SiO2 rings through which Ag+ ions migrate. Also, we demonstrate that moving only few atoms in such channels can change the resistance state by several orders of magnitude.

Automated summary

We introduce a simulation framework for investigating the switching behavior of Ag/a-SiO2 conductive bridging random access memories (CBRAM). The dynamics of the switching process is studied using classical molecular dynamics simulations, while the electrical properties are determined through ab initio calculations. Structural analysis of the oxide reveals that the switching mechanism depends on preferred channels with wide SiO2 rings for Ag+ ion migration. Additionally, we demonstrate that manipulating a few atoms within these channels can drastically change the resistance state.