期刊
SMALL
卷 18, 期 41, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202202529
关键词
2D materials; amorphous substrates; GaN; single-crystalline
类别
资金
- National Key Research and Development Program of China [2019YFA0708202, 2021YFB3600401]
- National Natural Science Foundation of China [61974140, 11974023]
- Youth Supporting Program of Institute of Semiconductors
This study successfully achieved epitaxial growth of single-crystalline GaN film on a WS2-glass wafer, paving the way for heterogeneous integration of semiconductors and breaking through the design and performance limitations of devices induced by substrate restriction.
Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single-crystalline GaN film on WS2-glass wafer is successfully performed by using the strong polarity of WS2 buffer layer and its perfectly matching lattice geometry with GaN. Furthermore, this study reveals that the first interfacial nitrogen layer plays a crucial role in the well-constructed interface by sharing electrons with both Ga and S atoms, enabling the single-crystalline stress-free GaN, as well as a violet light-emitting diode. This study paves a way for the heterogeneous integration of semiconductors and creates opportunities to break through the design and performance limitations, which are induced by substrate restriction, of the devices.
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