4.7 Article

Synergizing n → π* electronic transition and plasmonic hot electron injection enhances carrier generation of S-doped carbon nitride decorated with Au nanoparticles for Cr(VI) degradation

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ELSEVIER
DOI: 10.1016/j.seppur.2022.121515

关键词

Carbon nitride; Carrier generation; Near-infrared absorption; Cr(VI) degradation

资金

  1. NSF of China [21878199, 21808149, 21938006]
  2. National Key Technology RD Program [2020YFC1818401]
  3. Basic Research Project of Leading Technology in Jiangsu Province [BK20202012]
  4. Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)

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This study enhances the generation of carriers by loading ultrafine Au nanoparticles on S-doped carbon nitride, leading to efficient degradation of hexavalent chromium. The research proposes a general strategy of increasing different types of electron transitions to promote carrier generation.
Promoting carrier separation has received much attention owing to attractive enhancement effects in improving the utilization efficiency of photo-generated carrier. However, the photocatalytic performance has remained limiting mainly due to lack of magnifying carrier generation fundamentally. Herein, carrier generation enhanced CNS0.6/Au-1 is established by loading ultrafine Au nanoparticles on S-doped carbon nitride (CNSx) for efficient hexavalent chromium degradation. CNSx can activate the n -> pi* electronic transition of carbon nitride besides keeping the original pi -> pi* electronic transition. Plasmon-induced hot electron of Au nanoparticles merge with e(-) excited from pi -> pi* and n -> pi* transition in CNSx increasing the amount of catalytically effective electrons, and the efficient carrier separation is also achieved. Near-infrared absorption CNS0.6/Au-1 exhibits a remarkable photo-reactivity for the degradation of Cr(VI), which can degrade 10 ppm Cr(VI) completely within 40 min. This work proposes a general strategy of increasing different types of electron transitions to promote carrier generation.

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