Humidity Sensitivity of Chemically Synthesized ZnAl2O4/Al

Humidity sensitivity is evaluated for chemically synthesized ZnAl2O4/Al devices. We succeeded in synthesizing the ZnAl2O4/Al device by applying chemical techniques only. Hydrothermal treatment for the anodized aluminum (AlOx/Al) gives us the device of the ZnAl2O4/Al structure. All fabrication processes were conducted under 400 degrees C. The key was focusing on ZnAl2O4 as the sensing material instead of MgAl2O4, which is generally investigated as the humidity sensor. The evaluation of this ZnAl2O4/Al device clarified its effectiveness as a sensor. Both electrical capacitance, C-p, and the resistivity, R-p, measured by an LCR meter, obviously responded to the humidity with good sensitivity and appreciable repeatability. Our synthesis technique is possible in principle to improve on the process for the device with a complex structure providing a large surface area. These characteristics are believed to expand the application study of spinel aluminate devices as the sensor.

Automated summary

The humidity sensitivity of chemically synthesized ZnAl2O4/Al devices was evaluated in this study. The ZnAl2O4/Al device was successfully synthesized using chemical techniques alone. The device has shown good sensitivity and repeatability to humidity, as measured by electrical capacitance and resistivity. Furthermore, the synthesis technique has the potential to improve the manufacturing process of devices with complex structures and large surface areas.