Intersection of 4H-SiC Schottky diodes I-V curves due to temperature dependent series resistance

We theoretically and experimentally analyzed the non-obvious intersections of Schottky diode I-V curves measured at different temperatures caused by increasing the series resistance of the diode with increasing temperature. We considered a homogeneous diode and an inhomogeneous diode with two ways of influencing the I-V curve by the series resistance. In each case we developed a numerical method that enabled anticipation of the I-V intersection point. We studied the Ni/Au/4H-SiC diode for which such an intersection was measured. For homogeneous diodes and temperature interval 300-400 K we found a voltage dispersion of intersection points of only similar to 0.002 V, which is in accordance with experimental observations and suppositions in the literature that the curves intersect at almost the same I-V point. Even for an inhomogeneous diode with a common series resistance we obtained a dispersion of the intersection voltage of only similar to 0.02 V which is hardly discernible by the common visualization of the I-V curves. The largest dispersion of intersection points was obtained for an inhomogeneous diode composed of non-interacting diode patches.

Automated summary

This study theoretically and experimentally analyzed the non-obvious intersections of Schottky diode I-V curves measured at different temperatures caused by increasing the series resistance of the diode with increasing temperature. The researchers developed a numerical method to anticipate the intersection point and studied different types of diodes. The results showed a small dispersion of intersection voltages within a certain temperature range, consistent with experimental observations and suppositions in the literature.