The electron g factor in AlGaN/GaN quantum wells

Considering the Rashba and Zeeman effects, the effective Hamiltonian for electrons in AlGaN/GaN quantum wells (QWs) with the magnetic field is obtained, and the effective transverse and longitudinal g-factor (g(perpendicular to,vertical bar vertical bar)) are derived. The small anisotropy of the g factor in bulk wurtzite materials is clearly shown, while the anisotropy in QWs induced by the quantum confined effect is evident. Moreover, the average g factor (g*) depends greatly on the position of the origin along the growth axis (c axis). With increasing well thickness, both g(perpendicular to) and g(vertical bar vertical bar) increase, and the g-factor anisotropy first decreases and then increases slowly. Results show the g-factor and its anisotropy in III-nitride QWs can be modulated by the well thickness, and they are greatly affected by the internal electric field and the quantum confined effect. (C) 2015 Elsevier B.V. All rights reserved.